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Facet recovery and light emission from GaN/InGaN/GaN core-shell structures grown by metal organic vapour phase epitaxy on etched GaN nanorod arrays
E. D. Le Boulbar, Ionut Girgel, C. J. Lewins, P. R. Edwards, R. W. Martin, A. Šatka, D. W. E. Allsopp, P. A. Shields
Sep 03, 2013
The use of etched nanorods from a planar template as a growth scaffold for a highly regular GaN/InGaN/GaN core-shell structure is demonstrated. The recovery of m-plane non-polar facets from etched high-aspect-ratio GaN nanorods...
Strain evolution in GaN nanowires
M. Hugues, P. A. Shields, F. Sacconi, M. Mexis, M. Auf Der Maur, M. Cooke, M. Dineen, A. Di Carlo, D. W. E. Allsopp, J. Zúñiga-pérez
Aug 28, 2013
Top-down fabricated GaN nanowires, 250 nm in diameter and with various heights, have been used to experimentally determine the evolution of strain along the vertical direction of 1-dimensional objects. X-ray diffraction and...
Cathodoluminescence studies of GaN coalesced from nanopyramids selectively grown by MOVPE
Coalescence of GaN over arrays of GaN nanopyramids has important device applications and has been achieved on nano-imprint lithographically patterned GaN/sapphire substrates using metal organic vapour phase epitaxy. Spatially...
Point Defects in InGaN/GaN Core-Shell Nanorods
Abstract
Core-shell nanorod based light-emitting diodes (LEDs) with their exposed non-polar surfaces have the potential to overcome the limitations of planar LEDs by circumventing...
K Loeto, G Kusch, PM Coulon, SM Fairclough, EL Boulbar, I Girgel, PA Shields, RA Oliver
Jan 10, 2022
Facet recovery and light emission from GaN/InGaN/GaN core-shell structures grown by metal organic vapour phase epitaxy on etched GaN nanorod arrays
E. D. Le Boulbar, Ionut Girgel, C. J. Lewins, P. R. Edwards, R. W. Martin, A. Šatka, D. W. E. Allsopp, P. A. Shields
Sep 03, 2013
The use of etched nanorods from a planar template as a growth scaffold for a highly regular GaN/InGaN/GaN core-shell structure is demonstrated. The recovery of m-plane non-polar facets from etched high-aspect-ratio GaN nanorods...
Oxidation of GaN
GaN is a wide-band-gap semiconductor used in high-efficiency light-emitting diodes and solar cells. The solid is produced industrially at high chemical purities by deposition from a vapor phase, and oxygen may be included at...
Strain evolution in GaN nanowires
M. Hugues, P. A. Shields, F. Sacconi, M. Mexis, M. Auf Der Maur, M. Cooke, M. Dineen, A. Di Carlo, D. W. E. Allsopp, J. Zúñiga-pérez
Aug 28, 2013
Top-down fabricated GaN nanowires, 250 nm in diameter and with various heights, have been used to experimentally determine the evolution of strain along the vertical direction of 1-dimensional objects. X-ray diffraction and...
Determination of the Nitrogen Vacancy as a Shallow Compensating Center in GaN Doped with Divalent Metals
J. Buckeridge, C. Richard A. Catlow, D O Scanlon, T.W. Keal, P. Sherwood, M Miskufova, Aron Walsh, S M Woodley, A A Sokol
Jan 07, 2015
We report accurate energetics of defects introduced in GaN on doping with divalent metals, focusing on the technologically important case of Mg doping, using a model that takes into consideration both the effect of hole...
Oxidation of GaN
GaN is a wide-band-gap semiconductor used in high-efficiency light-emitting diodes and solar cells. The solid is produced industrially at high chemical purities by deposition from a vapor phase, and oxygen may be included at...
Determination of the Nitrogen Vacancy as a Shallow Compensating Center in GaN Doped with Divalent Metals
J. Buckeridge, C. Richard A. Catlow, D O Scanlon, T.W. Keal, P. Sherwood, M Miskufova, Aron Walsh, S M Woodley, A A Sokol
Jan 07, 2015
We report accurate energetics of defects introduced in GaN on doping with divalent metals, focusing on the technologically important case of Mg doping, using a model that takes into consideration both the effect of hole...
Cross-sectional and plan-view cathodoluminescence of GaN partially coalesced above a nanocolumn array
The optical properties of GaN layers coalesced above an array of nanocolumns have important consequences for advanced optoelectronic devices. GaN nanocolumns coalesced using a nanoscale epitaxial overgrowth technique have been...
Cathodoluminescence studies of GaN coalesced from nanopyramids selectively grown by MOVPE
Coalescence of GaN over arrays of GaN nanopyramids has important device applications and has been achieved on nano-imprint lithographically patterned GaN/sapphire substrates using metal organic vapour phase epitaxy. Spatially...
Impact of GAN-based lesion-focused medical image super-resolution on the robustness of radiomic features
Erick Costa de Farias, Christian di Noia, Changhee Han, Evis Sala, Mauro Castelli, Leonardo Rundo
Nov 01, 2021
Abstract: Robust machine learning models based on radiomic features might allow for accurate diagnosis, prognosis, and medical decision-making. Unfortunately, the lack of standardized radiomic feature extraction has hampered...
Point Defects in InGaN/GaN Core–Shell Nanorods
K Loeto, G Kusch, P-M Coulon, SM Fairclough, E Le Boulbar, I Girgel, PA Shields, RA Oliver
Mar 08, 2021
Abstract: Core-shell nanorod based light-emitting diodes (LEDs) with their exposed non-polar surfaces have the potential to overcome the limitations of planar LEDs by circumventing the quantum confined stark effect. In this...
Cross-sectional and plan-view cathodoluminescence of GaN partially coalesced above a nanocolumn array
The optical properties of GaN layers coalesced above an array of nanocolumns have important consequences for advanced optoelectronic devices. GaN nanocolumns coalesced using a nanoscale epitaxial overgrowth technique have been...
Point Defects in InGaN/GaN Core–Shell Nanorods
K Loeto, G Kusch, P-M Coulon, SM Fairclough, E Le Boulbar, I Girgel, PA Shields, RA Oliver
Mar 08, 2021
Abstract: Core-shell nanorod based light-emitting diodes (LEDs) with their exposed non-polar surfaces have the potential to overcome the limitations of planar LEDs by circumventing the quantum confined stark effect. In this...
Influence of stress on optical transitions in GaN nanorods containing a single InGaN/GaN quantum disk
Y. D. Zhuang, J. Bruckbauer, P. A. Shields, P. R. Edwards, R. W. Martin, D. W. E. Allsopp
Nov 07, 2014
Cathodoluminescence (CL) hyperspectral imaging has been performed on GaN nanorods containing a single InGaN quantum disk (SQD) with controlled variations in excitation conditions. Two different nanorod diameters (200 and 280...
Influence of stress on optical transitions in GaN nanorods containing a single InGaN/GaN quantum disk
Y. D. Zhuang, J. Bruckbauer, P. A. Shields, P. R. Edwards, R. W. Martin, D. W. E. Allsopp
Nov 07, 2014
Cathodoluminescence (CL) hyperspectral imaging has been performed on GaN nanorods containing a single InGaN quantum disk (SQD) with controlled variations in excitation conditions. Two different nanorod diameters (200 and 280...
Impact of GAN-based lesion-focused medical image super-resolution on the robustness of radiomic features.
Erick Costa de Farias, Christian di Noia, Changhee Han, Evis Sala, Mauro Castelli, Leonardo Rundo
Oct 18, 2021
Robust machine learning models based on radiomic features might allow for accurate diagnosis, prognosis, and medical decision-making. Unfortunately, the lack of standardized radiomic feature extraction has hampered their...
Circular LBP Prior-Based Enhanced GAN for Image Style Transfer
Image style transfer (IST) has drawn broad attention recently. At present, convolutional neural network (CNN)-based methods and generative adversarial network (GAN)-based methods have been broadly utilized in IST. However, the...
Published by: IGI Global Scientific Publishing
Running the Dual-PQC GAN on noisy simulators and real quantum hardware
Abstract
In an earlier work [1], we introduced dual-Parameterized Quantum Circuit (PQC) Generative Adversarial Networks (GAN), an advanced prototype of quantum GAN. We applied the...
Formation of voids in selective area growth of InN nanorods in SiNx on GaN templates
Mohammed Zeghouane, Yamina André, Geoffrey Avit, Jihen Jridi, Catherine Bougerol, Pierre-marie Coulon, Pierre Ferret, Dominique Castelluci, Evelyne Gil, Philip Shields, Vladimir G Dubrovskii, Agnès Trassoudaine
May 29, 2020
Experimental data and a supporting model are presented for the formation of voids in InN nanorods grown by selective area hydride vapor phase epitaxy on patterned GaN/c-Al 2 O 3 templates. It is shown...
Waveguide integrated GaN distributed Bragg reflector cavity using low-cost nanolithography
Simeng Jia, Emmanuel D. Le Boulbar, Krishna C. Balram, Jon R. Pugh, Tao Wang, Duncan W.E. Allsopp, Philip A. Shields, Martin J. Cryan
Nov 20, 2019
This work presents the design, fabrication and measurement of gallium nitride (GaN) distributed Bragg reflector cavities integrated with input and output grating couplers. The devices are fabricated using a new, low-cost...
Electron and hole stability in GaN and ZnO
We assess the thermodynamic doping limits of GaN and ZnO on the basis of point defect calculations performed using the embedded cluster approach and employing a hybrid non-local density functional for the quantum mechanical...
GaN LEDs with in situ synthesized transparent graphene heat-spreading electrodes fabricated by PECVD and penetration etching
Currently, applying graphene on GaN based electronic devices requires the troublesome, manual, lengthy, and irreproducible graphene transfer procedures, making it infeasible for real applications. Here, a semiconductor...
Fangzhu Xiong, Jie Sun, Matthew Cole, Weiling Guo, Chunli Yan, Yibo Dong, Le Wang, Zaifa Du, Tailiang Guo, Oun Yan
May 07, 2022
Currently, applying graphene on GaN based electronic devices requires the troublesome, manual, lengthy, and irreproducible graphene transfer procedures, making it infeasible for real applications. Here, a semiconductor...
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