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Waveguide integrated GaN distributed Bragg reflector cavity using low-cost nanolithography

OAI: oai:purehost.bath.ac.uk:openaire_cris_publications/83111dd2-26ae-43d5-a7e3-2522c9bec85f DOI: https://doi.org/10.1049/mnl.2019.0366

Abstract

This work presents the design, fabrication and measurement of gallium nitride (GaN) distributed Bragg reflector cavities integrated with input and output grating couplers. The devices are fabricated using a new, low-cost nanolithography technique: displacement Talbot lithography combined with direct laser writing lithography. The finite-difference time-domain method has been used to design all the components and measured and modelled results show good agreement. Such devices have applications in GaN integrated photonics and biosensing.